PART |
Description |
Maker |
RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五(DRM)的|00VAR84 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
H20R1202 |
Reverse Conducting IGBT
|
Infineon Technologies
|
H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
IKW30N65WR5 IKW30N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHY20N120R3 IHY15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
TISP5110H3BJ TISP5115H3BJ TISP5190H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
|
TY Semiconductor Co., Ltd TY Semiconductor Co., L...
|
TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路(SLIC
|
Bourns Inc. Bourns, Inc.
|